The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Jul. 09, 2007
Stefan Illek, Donaustauf, DE;
Peter Stauss, Pettendorf, DE;
Andreas Ploessl, Regensburg, DE;
Gudrun Diepold, Regensburg, DE;
Ines Pietzonka, Regensburg, DE;
Wilhelm Stein, Donaustauf, DE;
Ralph Wirth, Pettendorf-Adlersberg, DE;
Walter Wegleiter, Nittendorf, DE;
Stefan Illek, Donaustauf, DE;
Peter Stauss, Pettendorf, DE;
Andreas Ploessl, Regensburg, DE;
Gudrun Diepold, Regensburg, DE;
Ines Pietzonka, Regensburg, DE;
Wilhelm Stein, Donaustauf, DE;
Ralph Wirth, Pettendorf-Adlersberg, DE;
Walter Wegleiter, Nittendorf, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.