The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Nov. 09, 2006
Shih-chen Wang, Taipei, TW;
Hsin-ming Chen, Tainan County, TW;
Chun-hung LU, Yunlin, TW;
Ming-chou Ho, Hsinchu, TW;
Shih-jye Shen, Hsinchu, TW;
Ching-hsiang Hsu, Hsinchu, TW;
Shih-Chen Wang, Taipei, TW;
Hsin-Ming Chen, Tainan County, TW;
Chun-Hung Lu, Yunlin, TW;
Ming-Chou Ho, Hsinchu, TW;
Shih-Jye Shen, Hsinchu, TW;
Ching-Hsiang Hsu, Hsinchu, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A non-volatile memory formed on a first conductive type substrate is provided. The non-volatile memory includes a gate, a second conductive type drain region, a charge storage layer, and a second conductive type first lightly doped region. The gate is formed on the first conductive type substrate. The second conductive type drain region is formed in the first conductive type substrate at the first side of the gate. The charge storage layer is formed on the first conductive type substrate at the first side of the gate and between the second conductive type drain region and the gate. The second conductive type first lightly doped region is formed in the first conductive type substrate at the second side of the gate. The second side is opposite to the first side.