The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Sep. 20, 2005
Tiao-hua Kuo, San Jose, CA (US);
Nancy Leong, Sunnyvale, CA (US);
Hounien Chen, Fremont, CA (US);
Sachit Chandra, Sunnyvale, CA (US);
Nian Yang, Mountain View, CA (US);
Tiao-Hua Kuo, San Jose, CA (US);
Nancy Leong, Sunnyvale, CA (US);
Hounien Chen, Fremont, CA (US);
Sachit Chandra, Sunnyvale, CA (US);
Nian Yang, Mountain View, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method is provided for programming a nonvolatile memory array including an array of memory cells, where each memory cell including a substrate, a control gate, a charge storage element having at least two charge storage areas for storing at least two independent charges, a source region and a drain region. The method includes designating at least one memory cell as a high-speed memory cell and pre-conditioning the high-speed memory cells by placing a first of the at least two charge storage areas into a programmed state, and subsequently enabling the programming on the second area with much higher rate.