The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2008

Filed:

Mar. 09, 2007
Applicant:

David Owen, Redondo Beach, CA (US);

Inventor:

David Owen, Redondo Beach, CA (US);

Assignee:

Ultratech, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/02 (2006.01); G01L 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are methods to be carried out prior to, while, and/or after performing a photolithographic process to a wafer that involve wafer misalignment assessment. The method involves obtaining curvature and/or deformation information of a surface of the wafer over a plurality of locations so as to obtain a curvature map of the wafer. The curvature map is processed to obtain a stress map of the wafer. The stress map is used to determine displacement of a layer of the wafer. The displacement information is used to determine a degree of misalignment in the photolithographic process.


Find Patent Forward Citations

Owen, David. (2008). Determination of lithography misalignment based on curvature and stress mapping data of substrates (U.S. Patent No. 7433051). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7433051

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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