The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Apr. 04, 2006
Hyun-su Kim, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Jong-ho Yun, Gyeonggi-do, KR;
Sug-woo Jung, Gyeonggi-do, KR;
Eun-ji Jung, Gyeonggi-do, KR;
Hyun-Su Kim, Gyeonggi-do, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
Jong-Ho Yun, Gyeonggi-do, KR;
Sug-Woo Jung, Gyeonggi-do, KR;
Eun-Ji Jung, Gyeonggi-do, KR;
Abstract
There is provided a method of forming a semiconductor device having stacked transistors. When forming a contact hole for connecting the stacked transistors to each other, ohmic layers on the bottom and the sidewall of the common contact hole are separately formed. As a result, the respective ohmic layers are optimally formed to meet requirements or conditions. Accordingly, the contact resistance of the common contact may be minimized so that it is possible to enhance the speed of the semiconductor device.