The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Dec. 07, 2004
Yei-hsiung Lin, Hsinchu, TW;
Steven Huang, Kaohsiung, TW;
Yei-Hsiung Lin, Hsinchu, TW;
Steven Huang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of forming self-aligned silicides is described and applied to a substrate having an isolation area, which divides the substrate into a first area and a second area. A resist protective oxide layer is formed on the substrate, and subsequently a mask layer is formed on the resist protective oxide layer. Further, the mask layer includes an opening on the first area and another opening on a contact hole of the second area. When a resist protective oxide process is performed, the mask layer protects the resist protective oxide layer underlying the same from being removed, whereas the resist protective oxide layer under the openings are removed. Therefore, silicides are controlled to form on the first area and the contact hole of the second area in a subsequent self-aligned silicidation process.