The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Aug. 31, 2005
Applicants:
Jiutao LI, Boise, ID (US);
Ralph Kauffman, Boise, ID (US);
Richard A. Mauritzson, Meridian, ID (US);
Inventors:
Jiutao Li, Boise, ID (US);
Ralph Kauffman, Boise, ID (US);
Richard A. Mauritzson, Meridian, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/76 (2006.01); H01L 21/20 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming an improved shallow trench isolation (STI) region are disclosed. Several exemplary techniques are proposed for treating STI sidewalls to improve the silicon (Si) surface at the atomic level. Each of the exemplary methods creates a smooth STI sidewall surface, prior to performing oxidation, by reconstructing silicon atoms at the surface. The suggested STI region can be used in imager pixel cells or memory device applications.