The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Jan. 14, 2004
Zheng Yuan, Fremont, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Cary Ching, Sunnyvale, CA (US);
Shang Wong, Cupertino, CA (US);
Kevin Mikio Mukai, Santa Clara, CA (US);
Nitin K. Ingle, Campbell, CA (US);
Zheng Yuan, Fremont, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Cary Ching, Sunnyvale, CA (US);
Shang Wong, Cupertino, CA (US);
Kevin Mikio Mukai, Santa Clara, CA (US);
Nitin K. Ingle, Campbell, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500° C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500° C. throughout deposition of the bulk layer.