The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
May. 16, 2006
Yasunori Uchino, Kawasaki, JP;
Kazuo Kawamura, Kawasaki, JP;
Naoyoshi Tamura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of fabricating a semiconductor device includes the steps of forming a metallic nickel film on a silicon substrate such that the metallic nickel film covers an insulation film on the silicon substrate and a silicon surface of the silicon substrate, annealing the silicon substrate in a silane gas ambient at a temperature not exceeding 220° C. to form a first nickel silicide layer having a composition primarily of NiSi on the silicon surface and a surface of the metallic nickel film, removing the metallic nickel film after the step of forming the nickel silicide layer by a wet etching process, and converting the first nickel silicide layer to a second nickel silicide layer primarily of nickel monosilicide (NiSi) by applying a thermal annealing process.