The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
May. 13, 2004
Applicants:
Zhiqiang Wu, Plano, TX (US);
Haowen Bu, Plano, TX (US);
Inventors:
Zhiqiang Wu, Plano, TX (US);
Haowen Bu, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOS transistor structure comprising a gate dielectric layer (), a gate electrode (), and source and drain regions () are formed in a semiconductor substrate (). First second and third dielectric layers (), (), and () are formed over the MOS transistor structure. The second and third dielectric structures (), () are removed leaving a MOS transistor with a stressed channel region resulting in improved channel mobility characteristics.