The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2008

Filed:

Mar. 21, 2007
Applicant:

Yasushi Matsubara, Tokyo, JP;

Inventor:

Yasushi Matsubara, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A reference potential generating circuit has a current mirror amplifier (CM) supplied with an input reference potential and a feedback level, an output transistor (QP) supplied with an output of the current mirror amplifier as an input and producing an output reference potential as an output, a monitoring portion (Rand R) for generating the feedback level from the output of the output transistor, a first switch (QN) for controlling supply of a power supply potential (VSS}) to the current mirror amplifier, a second switch (QN) for controlling supply of the power supply potential (VSS) to the monitoring portion, and an output switch (TSW) for controlling connection of the output of the output transistor to a next stage. The first and the second switches and the output switch are simultaneously turned off. When a first predetermined period elapses after the first and the second switches and the output switch are turned off, the first and the second switches are turned on. When a second predetermined period elapses after the first and the second switches are turned on, the output switch is turned on.


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Matsubara, Yasushi. (2008). Reference potential generating circuit and semiconductor memory device having the same (U.S. Patent No. 7428177). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7428177

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