The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2008
Filed:
May. 05, 2006
Chang-youn Hwang, Kyoungki-do, KR;
Hyung-hwan Kim, Kyoungki-do, KR;
Ik-soo Choi, Kyoungki-do, KR;
Hae-jung Lee, Kyoungki-do, KR;
Chang-Youn Hwang, Kyoungki-do, KR;
Hyung-Hwan Kim, Kyoungki-do, KR;
Ik-Soo Choi, Kyoungki-do, KR;
Hae-Jung Lee, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for forming a storage node contact plug in a semiconductor device is provided. The method includes: forming an inter-layer insulation layer over a substrate having a conductive plug; etching a portion of the inter-layer insulation layer using at least line type storage node contact masks as an etch mask to form a first contact hole with sloping sidewalls; etching another portion of the inter-layer insulation layer underneath the first contact hole to form a second contact hole exposing the conductive plug, the second contact hole having substantially vertical sidewalls; and filling the first and second storage node contact holes to form a storage node contact plug.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile