The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Nov. 25, 2003
Kezhakkedath R. Udayakumar, Dallas, TX (US);
Ted S. Moise, Dallas, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Martin G. Albrecht, McKinney, TX (US);
William W. Dostalik, Jr., Plano, TX (US);
Francis G. Celii, Dallas, TX (US);
Kezhakkedath R. Udayakumar, Dallas, TX (US);
Ted S. Moise, Dallas, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Martin G. Albrecht, McKinney, TX (US);
William W. Dostalik, Jr., Plano, TX (US);
Francis G. Celii, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for etching a substrate, a method for forming an integrated circuit, an integrated circuit formed using the method, and an integrated circuit. The method for etching a substrate includes, among other steps, providing a substratehaving an aluminum oxide etch stop layerlocated thereunder, and then etching an opening, in the substrateusing an etchant comprising carbon oxide, a fluorocarbon, an etch rate modulator, and an inert carrier gas, wherein a flow rate of the carbon oxide is greater than about 80 sccm and the etchant is selective to the aluminum oxide etch stop layer. The aluminum oxide etch stop layer may also be used in the back-end of advanced CMOS processes as a via etch stop layer.