The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Nov. 21, 2005
Chao-chi Chen, Tainan, TW;
Chuan-ping Hou, Yong Kong, TW;
Chao-Chi Chen, Tainan, TW;
Chuan-Ping Hou, Yong Kong, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming a trench capacitor is presented in the following process steps. A trench is formed on a semiconductor substrate. A first trench dielectric is deposited into the trench without reaching a full height thereof. An etch stop layer is formed on the first trench dielectric and along inner surfaces of the trench. A second trench dielectric is deposited on the etch stop layer. The second trench dielectric and the etch stop layer are removed to expose the first trench dielectric in the trench. A conductive layer is formed on the first trench dielectric in the trench, such that the conductive layer, the first trench dielectric and the semiconductor substrate function as a trench capacitor.