The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Mar. 22, 2006
Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitors
Applicants:
Jong-cheol Lee, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Jung-hee Chung, Gyeonggi-do, KR;
Jae-hyoung Choi, Gyeonggi-do, KR;
Se-hoon OH, Gyeonggi-do, KR;
Hong-bum Park, Gyeonggi-do, KR;
Inventors:
Jong-cheol Lee, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Jung-hee Chung, Gyeonggi-do, KR;
Jae-hyoung Choi, Gyeonggi-do, KR;
Se-hoon Oh, Gyeonggi-do, KR;
Hong-bum Park, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
Capacitors having upper electrodes that include a lower electrode, a dielectric layer and an upper electrode that includes a conductive metal nitride layer and a doped polysilicon germanium layer are provided. At least part of the conductive metal nitride layer is oxidized and/or at least part of the dielectric layer is nitridized.