The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Jun. 10, 2005
Kang Sub Yim, Santa Clara, CA (US);
Lihua LI Huang, San Jose, CA (US);
Francimar Schmitt, Santa Clara, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Kang Sub Yim, Santa Clara, CA (US);
Lihua Li Huang, San Jose, CA (US);
Francimar Schmitt, Santa Clara, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films are formed by plasma-assisted chemical vapor deposition at low temperatures (300° C. or less). In accordance with another embodiment, as-deposited carbon containing silicon oxide films incorporate a porogen whose subsequent liberation reduces film stress.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile