The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Mar. 09, 2005
Yi Zheng, San Jose, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Eric Hollar, Cupertino, CA (US);
Kang Sub Yim, Mountain View, CA (US);
Yi Zheng, San Jose, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Eric Hollar, Cupertino, CA (US);
Kang Sub Yim, Mountain View, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.