The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Nov. 30, 2006
Dao-ping Wang, Hsinchu, TW;
Ping-wei Wang, Hsin-Chu, TW;
Dao-Ping Wang, Hsinchu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Abstract
The present invention relates generally to an integrated circuit (IC) design, and more particularly to a method and apparatus for providing an SRAM cell with improved read and write margins. The method includes providing a first negative voltage to a bit-line and a supply voltage to an inverse bit-line to increase a first potential difference between the bit-line and the inverse bit-line during a write operation of a logic '0.' The method also includes providing the first negative voltage to the inverse bit-line and the supply voltage to the bit-line to increase the first potential difference during a write operation of a data '1.'