The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Jan. 06, 2006
Godfrey Augustine, Laurel, MD (US);
Deborah Partlow, Crownsville, MD (US);
Alfred Paul Turley, Ellicot City, MD (US);
Thomas Knight, Silver Spring, MD (US);
Jeffrey D. Hartman, Severn, MD (US);
Godfrey Augustine, Laurel, MD (US);
Deborah Partlow, Crownsville, MD (US);
Alfred Paul Turley, Ellicot City, MD (US);
Thomas Knight, Silver Spring, MD (US);
Jeffrey D. Hartman, Severn, MD (US);
Northrop Grumman Corporation, Los Angeles, CA (US);
Abstract
High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an AlGaN/GaN structure is grown over the bonded silicon layer. A silicon nitride or a silicon oxide layer is then deposited over the AlGaN/GaN structure. Following this, a thin layer of silicon is bonded to the silicon nitride/silicon oxide layer. An area for the fabrication of AlGaN/GaN devices is defined, and the silicon is etched away from those areas. Following this, CMOS devices are fabricated on the silicon layer and AlGaN/GaN devices fabricated on the AlGaN/GaN surface.