The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Apr. 06, 2006
Chul-sung Kim, Gyeonggi-do, KR;
Yu-gyun Shin, Gyeonggi-do, KR;
Bon-young Koo, Gyeonggi-do, KR;
Ji-hyun Kim, Gyeonggi-do, KR;
Young-jin Noh, Gyeonggi-do, KR;
Chul-Sung Kim, Gyeonggi-do, KR;
Yu-Gyun Shin, Gyeonggi-do, KR;
Bon-Young Koo, Gyeonggi-do, KR;
Ji-Hyun Kim, Gyeonggi-do, KR;
Young-Jin Noh, Gyeonggi-do, KR;
Abstract
In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.