The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Apr. 13, 2005
Shouochi Uno, Ome, JP;
Atsushi Maekawa, Akishima, JP;
Takashi Yunogami, Niiza, JP;
Kazutami Tago, Hitachinaka, JP;
Kazuo Nojiri, Higashimurayama, JP;
Shuntaro Machida, Kokubunji, JP;
Takafumi Tokunaga, Iruma, JP;
Shouochi Uno, Ome, JP;
Atsushi Maekawa, Akishima, JP;
Takashi Yunogami, Niiza, JP;
Kazutami Tago, Hitachinaka, JP;
Kazuo Nojiri, Higashimurayama, JP;
Shuntaro Machida, Kokubunji, JP;
Takafumi Tokunaga, Iruma, JP;
Renesas Technology Corp., Tokyo, JP;
Hitachi Ulsi Systems Co., Ltd, Tokyo, JP;
Abstract
In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.