The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Feb. 09, 2006
Naohiro Hosoda, Hitachinaka, JP;
Tetsuo Adachi, Hitachinaka, JP;
Naohiro Hosoda, Hitachinaka, JP;
Tetsuo Adachi, Hitachinaka, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Provided is a manufacturing method of a semiconductor device which has the following steps of forming a plurality of layered patterns obtained by stacking an insulating film, a conductor film for forming a floating gate electrode and another insulating film over a semiconductor substrate in the order of mention, forming sidewalls over the side surfaces of the plurality of layered patterns, removing a damage layer of the semiconductor substrate between any two adjacent layered patterns by dry etching, forming an insulating film over the semiconductor substrate between two adjacent layered patterns, and forming a plurality of assist gate electrodes over the insulating film between two adjacent layered patterns in self alignment therewith. According to the present invention, a semiconductor device having a flash memory has improved reliability.