The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Jun. 22, 2005
Koichiro Tanaka, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Ritsuko Kawasaki, Kanagawa, JP;
Abstract
To form a polycrystalline silicon film having a grain size of 1 μm or greater by means of laser annealing. A beam emitted from a laser apparatus () is split in two by a half mirror. The split beams are processed into linear shapes by cylindrical lenses () to (), and (), then simultaneously irradiate an irradiation surface (). If an amorphous silicon film formed on a glass substrate is disposed on the irradiation surface (), an area will be irradiated by both a linear shape beam entering from a front surface and a linear shape beam that has transmitted through the glass surface. Both linear shape beams irradiate the same area to thereby crystallize the amorphous silicon film.