The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Jan. 11, 2005
Bang-chein Ho, Hsin-Chu, TW;
Jian-hong Chen, Hsin chu, TW;
Bang-Chein Ho, Hsin-Chu, TW;
Jian-Hong Chen, Hsin chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for reducing a critical dimension of a photoresist pattern while improving a line spacing between distal end portions of pattern lines wherein the method includes providing a substrate including an overlying resist; exposing the resist to an activating light source; baking the resist in a first baking process followed by developing the resist in a first development process to form a first resist pattern; then baking the first resist pattern in a second baking process followed by developing the first resist pattern in a second development process to form a second resist pattern having reduced dimensions; and, then dry trimming the second resist pattern to form a final resist pattern with reduced dimensions compared to the second resist pattern.