The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Dec. 26, 2005
Yasuo Kitaoka, Osaka, JP;
Yusuke Mori, Osaka, JP;
Takatomo Sasaki, Osaka, JP;
Fumio Kawamura, Osaka, JP;
Minoru Kawahara, Osaka, JP;
Yasuo Kitaoka, Osaka, JP;
Yusuke Mori, Osaka, JP;
Takatomo Sasaki, Osaka, JP;
Fumio Kawamura, Osaka, JP;
Minoru Kawahara, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Osaka University, Osaka, JP;
Abstract
The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. The alkali metal preferably is lithium (Li). With this method, silicon carbide single crystal can be produced even under low-temperature conditions of 1500° C. or lower, for example. The photograph of FIG.B is an example of a silicon carbide single crystal obtained by the method of the present invention.