The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Aug. 17, 2005
Chih-wei Chao, Taipei, TW;
Chin-wei HU, Hsinchu, TW;
Chi-wen Chen, Chia Yi Hsien, TW;
AU Optronics Corp., Hsinchu, TW;
Abstract
An EEPROM includes a substrate, a first semiconductor layer and a second semiconductor layer formed on the substrate. The first semiconductor layer is isolated from the second semiconductor layer by a trench. A first source and a first drain are located at two opposing sides of the first semiconductor layer. A first dielectric layer is formed on the first semiconductor layer, and a first floating gate is formed on the first dielectric layer. A second source and a second drain are located at two opposing sides of the second semiconductor layer. A second dielectric layer is formed on the second semiconductor layer, and a second floating gate is formed on the second dielectric layer. The first floating gate and the second floating gate are electrically connected.