The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Sep. 26, 2006
Yoshinori Tsuchiya, Yokohama, JP;
Masato Koyama, Kanagawa, JP;
Masahiko Yoshiki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an aspect of the invention, a semiconductor device comprises: a N-channel MIS transistor comprising; a p-type semiconductor layer; a first gate insulation layer formed on the p-type semiconductor layer; a first gate electrode formed on the first gate insulation layer; and a first source-drain region formed in the p-type semiconductor layer where the first gate electrode is sandwiched along a direction of gate length. The first gate electrode comprises a crystal phase including a cubic crystal of NiSiwhich has a lattice constant of 5.39 angstroms to 5.40 angstroms.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile