The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Jul. 15, 2005
Mitsuo Umemoto, Osaka, JP;
Yoshio Okayama, Sunnyvale, CA (US);
Kazumasa Tanida, Chiba, JP;
Hiroshi Terao, Tokyo, JP;
Yoshihiko Nemoto, Tokyo, JP;
Mitsuo Umemoto, Osaka, JP;
Yoshio Okayama, Sunnyvale, CA (US);
Kazumasa Tanida, Chiba, JP;
Hiroshi Terao, Tokyo, JP;
Yoshihiko Nemoto, Tokyo, JP;
Other;
Abstract
This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.