The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2008

Filed:

Jul. 12, 2007
Applicants:

Hee Youl Lee, Icheon-si, KR;

Hee Hyun Chang, Seongnam-si, KR;

Inventors:

Hee Youl Lee, Icheon-si, KR;

Hee Hyun Chang, Seongnam-si, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A program control circuit and method thereof selectively controls a supply time of a word line bias voltage depending on the number of program cycles being in progress. Therefore, over-programming of MLCs can be prevented and an overall program time can be shortened.


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Lee, Hee. (2008). Program control circuit of flash memory device having mlc and method thereof (U.S. Patent No. 7414871). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7414871

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