The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Oct. 03, 2006
Akihiro Shimizu, Hitachinaka, JP;
Nagatoshi Ooki, Shimizu, JP;
Yusuke Nonaka, Tachikawa, JP;
Katsuhiko Ichinose, Tokorozawa, JP;
Akihiro Shimizu, Hitachinaka, JP;
Nagatoshi Ooki, Shimizu, JP;
Yusuke Nonaka, Tachikawa, JP;
Katsuhiko Ichinose, Tokorozawa, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device has an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the main surface of the semiconductor substrate, which second region is different from the first region. An internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is different from an internal stress generated in the channel formation region of the p channel conductivity type field effect transistor. The internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is a tensile stress, while the internal stress generated in the channel formation region of the p channel conductivity type field effect transistor is a compressive stress.