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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7413994 B1

PDFFull Text
Date of Patent:
Aug. 19, 2008

Filed:

Jun. 08, 2005

Hydrogen and oxygen based photoresist removal process

Applicants:

Patricia Beauregard Smith, Colleyville, TX (US);

Laura M. Matz, Murphy, TX (US);

Vinay Shah, Colorado Springs, CO (US);

Inventors:

Patricia Beauregard Smith, Colleyville, TX (US);

Laura M. Matz, Murphy, TX (US);

Vinay Shah, Colorado Springs, CO (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

W. James Brady, III

Frederick J. Telecky, Jr.

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable.

Find Patent Forward Citations

Smith, Patricia. (2008). Hydrogen and oxygen based photoresist removal process (U.S. Patent No. 7413994). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7413994

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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