The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2008

Filed:

Sep. 21, 2004
Applicants:

Atsushi Shigeta, Fujisawa, JP;

Kazuhiko Ida, Yokohama, JP;

Yoshitaka Matsui, Yokohama, JP;

Inventors:

Atsushi Shigeta, Fujisawa, JP;

Kazuhiko Ida, Yokohama, JP;

Yoshitaka Matsui, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.


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