The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
May. 10, 2006
Katsuhiko Hieda, Yokohama, JP;
Atsuko Kawasaki, Yokohama, JP;
Masahiro Kiyotoshi, Sagamihara, JP;
Katsuhiko Tachibana, Yokohama, JP;
Soichi Yamazaki, Yokohama, JP;
Katsuhiko Hieda, Yokohama, JP;
Atsuko Kawasaki, Yokohama, JP;
Masahiro Kiyotoshi, Sagamihara, JP;
Katsuhiko Tachibana, Yokohama, JP;
Soichi Yamazaki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
There is disclosed a method of manufacturing a semiconductor device, wherein an SiNfilm is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.