The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2008

Filed:

Sep. 14, 2005
Applicants:

Takashi Noma, Gunma, JP;

Kazuo Okada, Gunma, JP;

Hiroshi Yamada, Gunma, JP;

Masanori Iida, Gunma, JP;

Inventors:

Takashi Noma, Gunma, JP;

Kazuo Okada, Gunma, JP;

Hiroshi Yamada, Gunma, JP;

Masanori Iida, Gunma, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/312 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention is directed to improvement of reliability of a chip size package type semiconductor device in a manufacturing method thereof. A support body is formed on a front surface of a semiconductor substrate with a first insulation film therebetween. Then, a part of the semiconductor substrate is selectively etched from its back surface to form an opening, and then a second insulation film is formed on the back surface. Next, the first insulation film and the second insulation film at a bottom of the opening are selectively etched, to expose pad electrodes at the bottom of the opening. Then, a third resist layer is selectively formed on a second insulation film at boundaries between sidewalls and the bottom of the opening on the back surface of the semiconductor substrate. Furthermore, a wiring layer electrically connected with the pad electrodes at the bottom of the opening and extending onto the back surface of the semiconductor substrate is selectively formed corresponding to a predetermined pattern.


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