The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Jun. 02, 2003
Salim Sateria, Amherst, NY (US);
Arthur Edward Holmer, Lewiston, NY (US);
Ronald William Shrewsbury, East Amherst, NY (US);
Salim Sateria, Amherst, NY (US);
Arthur Edward Holmer, Lewiston, NY (US);
Ronald William Shrewsbury, East Amherst, NY (US);
Praxair Technology, Inc, Danbury, CT (US);
Abstract
This invention is directed a method for producing an ultra-high purity semiconductor gas such as ammonia gas. The method includes the steps of directing an ammonia fluid having a liquid phase moisture content that is less than about 500 parts per million through an evaporation means, to produce purified vapor phase ammonia, and directing the purified vapor phase ammonia through an adsorption means to remove impurities therein and produce ultra-high purity ammonia gas.