The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Sep. 17, 2004
Kazuo Takeda, Tokorozawa, JP;
Masakazu Saito, Mobara, JP;
Yukio Takasaki, Kawasaki, JP;
Hironobu Abe, Chiba, JP;
Makoto Ohkura, Fuchu, JP;
Yoshinobu Kimura, Tokyo, JP;
Takeo Shiba, Kodaira, JP;
Kazuo Takeda, Tokorozawa, JP;
Masakazu Saito, Mobara, JP;
Yukio Takasaki, Kawasaki, JP;
Hironobu Abe, Chiba, JP;
Makoto Ohkura, Fuchu, JP;
Yoshinobu Kimura, Tokyo, JP;
Takeo Shiba, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.