The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2008

Filed:

Oct. 11, 2005
Applicants:

Kuo-lung Fang, Jhudong Township, Hsinchu County, TW;

Wen-ching Tsai, Jihsin Village, TW;

Yeong-shyang Lee, Hsinchu, TW;

Han-tu Lin, Wuci Township, Taichung County, TW;

Inventors:

Kuo-Lung Fang, Jhudong Township, Hsinchu County, TW;

Wen-Ching Tsai, Jihsin Village, TW;

Yeong-Shyang Lee, Hsinchu, TW;

Han-Tu Lin, Wuci Township, Taichung County, TW;

Assignee:

AU Optronics Corp., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/20 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.


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