The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Dec. 28, 2006
Ji Hye Han, Incheon, KR;
OK Min Moon, Gyeonggi-do, KR;
Woo Jin Kim, Gyeonggi-do, KR;
Hyo Seob Yoon, Gyeonggi-do, KR;
Ji Yong Park, Gyeonggi-do, KR;
Kee Joon OH, Gyeonggi-do, KR;
Ji Hye Han, Incheon, KR;
Ok Min Moon, Gyeonggi-do, KR;
Woo Jin Kim, Gyeonggi-do, KR;
Hyo Seob Yoon, Gyeonggi-do, KR;
Ji Yong Park, Gyeonggi-do, KR;
Kee Joon Oh, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.