The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Apr. 05, 2007
Byoung W. Min, Austin, TX (US);
Jon D. Cheek, Cedar Park, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
Byoung W. Min, Austin, TX (US);
Jon D. Cheek, Cedar Park, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for making a semiconductor device, comprising (a) providing a structure comprising a gate electrode () disposed on a substrate (); (b) creating first () and second () pre-amorphization implant regions in the substrate such that the first and second pre-amorphization implant regions are asymmetrically disposed with respect to said gate electrode; (c) creating first () and second () spacer structures adjacent to first and second sides of the gate electrode, wherein the first and second spacer structures overlap the first and second pre-amorphization implant regions; and (d) creating source () and drain () regions in the substrate adjacent, respectively, to the first and second spacer structures.