The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2008

Filed:

Aug. 25, 2005
Applicant:

Pedro Vagos, Bend, OR (US);

Inventor:

Pedro Vagos, Bend, OR (US);

Assignee:

Nanometrics Incorporated, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and apparatus for assessing a constituent in a semiconductor substrate. Several embodiments of the invention are directed toward non-contact methods and systems for identifying an atom specie of a dopant implanted into the semiconductor substrate using techniques that do not mechanically contact the substrate with electrical leads or other types of mechanical measuring instruments. For example, one embodiment of a non-contact method of assessing a constituent in a semiconductor substrate in accordance with the invention comprises obtaining an actual reflectance spectrum of infrared radiation reflected from the semiconductor substrate, and ascertaining a plasma frequency value (ω) and a collision frequency value (γ) for the semiconductor substrate based on the actual reflectance spectrum. This method can further include identifying a dopant type based on a relationship between dopant types and (a) plasma frequency values and (b) collision frequency values.


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