The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Feb. 17, 2006
Takeshi Ito, Kawasaki, JP;
Satoshi Inagaki, Kawasaki, JP;
Yasunori Uchino, Kawasaki, JP;
Kazuo Kawamura, Kawasaki, JP;
Takeshi Ito, Kawasaki, JP;
Satoshi Inagaki, Kawasaki, JP;
Yasunori Uchino, Kawasaki, JP;
Kazuo Kawamura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of fabricating a semiconductor device comprises the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.