The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Jul. 07, 2005
Atsuko Kawasaki, Yokohama, JP;
Masahiro Kiyotoshi, Sagamihara, JP;
Keisuke Nakazawa, Yokohama, JP;
Osamu Arisumi, Yokohama, JP;
Takeshi Hoshi, Yokohama, JP;
Katsuhiko Tachibana, Yokohama, JP;
Atsuko Kawasaki, Yokohama, JP;
Masahiro Kiyotoshi, Sagamihara, JP;
Keisuke Nakazawa, Yokohama, JP;
Osamu Arisumi, Yokohama, JP;
Takeshi Hoshi, Yokohama, JP;
Katsuhiko Tachibana, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.