The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Mar. 16, 2006
Applicant:
Dmitriy Marinskiy, Tampa, FL (US);
Inventor:
Dmitriy Marinskiy, Tampa, FL (US);
Assignee:
Semiconductor Diagnostics, Inc., Tampa, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
The surface photovoltage dopant concentration measurement of a semiconductor wafer is calibrated by biasing the semiconductor wafer into an avalanche breakdown condition in a surface depletion region; determining a contact potential difference value corresponding to an avalanche breakdown; determining small signal ac-surface photovoltage value corresponding to an avalanche breakdown; and using the values of the contact potential and the surface photovoltage to calculate a calibration constant that relates depletion layer capacitance and an inverse of the surface photovoltage.