The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Jul. 08, 2005
Hajime Tsuchiya, Kamamoto, JP;
Hiromi Egawa, Yokkaichi, JP;
Terukazu Kokubo, Tsukuba, JP;
Atsushi Shiota, Sunnyvale, CA (US);
Hajime Tsuchiya, Kamamoto, JP;
Hiromi Egawa, Yokkaichi, JP;
Terukazu Kokubo, Tsukuba, JP;
Atsushi Shiota, Sunnyvale, CA (US);
JSR Corporation, Tokyo, JP;
Abstract
A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): RSi(OR), (2): Si(OR), (3): (R)Si(OR), and (4): R(RO)Si—(R)—Si(OR)R.