The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2008

Filed:

Jun. 15, 2005
Applicants:

Yoshinobu Sekiguchi, Machida, JP;

Takao Yonehara, Kawasaki, JP;

Makoto Koto, Machida, JP;

Masahiro Okuda, Sagamihara, JP;

Tetsuya Shimada, Zama, JP;

Inventors:

Yoshinobu Sekiguchi, Machida, JP;

Takao Yonehara, Kawasaki, JP;

Makoto Koto, Machida, JP;

Masahiro Okuda, Sagamihara, JP;

Tetsuya Shimada, Zama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer () on a seed substrate (), a semiconductor film forming step of forming a semiconductor film () on the separation layer (), and a separation step of separating, by using the separation layer (), the semiconductor film () from a composite member (Ia) formed in the semiconductor film forming step.


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