The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Sep. 29, 2006
Applicants:
Zhi He, El Segundo, CA (US);
Robert Beach, Altadena, CA (US);
Inventors:
Zhi He, El Segundo, CA (US);
Robert Beach, Altadena, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.
He, Zhi. (2008). Iii-nitride semiconductor fabrication (U.S. Patent No. 7399692). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7399692
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile