The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Aug. 02, 2004
Eric A. Hudson, Berkeley, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method of forming a feature in a low-k (k<3.0) dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A stripping gas comprising COis provided. A plasma is formed from the stripping gas comprising CO. The plasma from the stripping gas comprising COis used to strip the patterned photoresist mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile