The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Feb. 09, 2004
Hiroshi Inagaki, Kanagawa, JP;
Masahiro Shibata, Kanagawa, JP;
Shigeki Kawashima, Kanagawa, JP;
Nobuyuki Fukuda, Kanagawa, JP;
Hiroshi Inagaki, Kanagawa, JP;
Masahiro Shibata, Kanagawa, JP;
Shigeki Kawashima, Kanagawa, JP;
Nobuyuki Fukuda, Kanagawa, JP;
Sumco Techxiv Corporation, Kanagawa, JP;
Abstract
A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature difference ΔTc not causing dislocation in the seed crystal is determined according to the concentration (C) of the impurities added to the seed crystal () and the size (diameter D) of the seed crystal (). When the seed crystal () comes into contact with the melt (), electric power supplied to a bottom heater () is fixed, and a magnetic field produced by a magnet () is applied to the melt (). Electric power supplied to a main heater () is controlled so that the temperature at the surface of the melt () which the seed crystal () comes into contact with may be a target value. After the seed crystal () comes into contact with the melt (), single crystal silicon is pulled up without performing a necking process.