The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Dec. 20, 2005
Applicants:
Fumitoshi Toyokawa, Miyagi, JP;
Haru Okawa, Miyagi, JP;
Eiichi Okamoto, Miyagi, JP;
Inventors:
Assignee:
Fujifilm Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract
A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in the n-type epitaxial growth layer, the solid-state image pickup element comprising: a photoelectric converting section; and a charge transferring section having charge transfer electrodes which transfer charges produced in the photoelectric converting section, and the n-type silicon substrate has a specific resistance of 10/1,000 Ωcm or less.