The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Mar. 10, 2005
Hyeoung-won Seo, Gyeonggi-do, KR;
Ki-nam Kim, Gyeonggi-do, KR;
Woun-suck Yang, Gyeonggi-do, KR;
Du-heon Song, Gyeonggi-do, KR;
Hyeoung-Won Seo, Gyeonggi-do, KR;
Ki-Nam Kim, Gyeonggi-do, KR;
Woun-Suck Yang, Gyeonggi-do, KR;
Du-Heon Song, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
According to some embodiments of the invention, transistors of a semiconductor device have a punchthrough protection layer, and methods of forming the same are provided. A channel-portion hole extends downward from a main surface of a semiconductor substrate. A punchthrough protection layer and a channel-portion layer are sequentially formed at a lower portion of the channel-portion hole. A word line pattern fills an upper portion of the channel-portion hole, and is formed on the semiconductor substrate. The word line pattern is formed to have a word line and a word line capping layer pattern stacked thereon, and the channel-portion layer is a channel region. The punchthrough protection layer can reduce a leakage current of a capacitor of the transistor embodied in a DRAM.